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| FDP2670/FDB2670 November 2001 FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 V * Low gate charge (27 nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability D D G G D S TO-220 FDP Series G S TO-263AB FDB Series S Absolute Maximum Ratings Symbol VDSS VGSS ID PD dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 200 20 (Note 1) (Note 1) Units V V A A W W/C V/ns C 19 40 93 0.63 3.2 -65 to +175 Total Power Dissipation @ TC = 25C Derate above 25C Peak Diode Recovery dv/dt (Note 3) Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.6 62.5 C/W C/W Package Marking and Ordering Information Device Marking FDB2670 FDP2670 Device FDB2670 FDP2670 Reel Size 13'' Tube Tape width 24mm n/a Quantity 800 units 45 units 2001 Fairchild Semiconductor Corporation FDP2670/FDB2670 Rev C1(W) FDP2670/FDB2670 Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VDD = 100 V, ID = 10 A Min Typ Max Units 375 10 mJ A Drain-Source Avalanche Ratings (Note 1) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 160 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V 200 241 1 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 10 A VGS = 10V, ID = 10 A, TJ = 125C VGS = 10 V, VDS = 10 V, VDS = 10 V ID = 10 A 2 4 -9 98 205 4.5 V mV/C 130 285 m A 20 24 S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 100 V, f = 1.0 MHz V GS = 0 V, 1320 71 24 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 100 V, VGS = 10 V, ID = 1 A, RGEN = 6 14 5 26 23 25 10 41 37 38 ns ns ns ns nC nC nC VDS = 100 V, VGS = 10 V ID = 10 A, 27 7 10 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Notes: 1. Calculated continuous current based on maximum allowable junction temperature. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. ISD 3A, di/dt 100A/s, VDD BVDSS, Starting TJ = 25C Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 10 A Voltage 19 (Note 2) A V 0.8 1.3 FDP2670/FDB2670 Rev C1(W) FDP2670/FDB2670 Typical Characteristics 1.5 VGS = 10V 7.0V ID, DRAIN CURRENT (A) 24 6.5V 18 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 1.4 VGS = 6V 1.3 6.5V 1.2 7.0V 1.1 1 0.9 0.8 10V 6.0V 12 6 0 0 3 6 9 12 15 VDS, DRAIN-SOURCE VOLTAGE (V) 0 6 12 18 24 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.35 ID = 5A RDS(ON), ON-RESISTANCE (OHM) 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 1.8 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 o ID =10A VGS = 10V 0.3 0.25 0.2 0.15 0.1 TA = 25oC 0.05 0 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125oC 125 150 175 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 40 VDS = 50V ID, DRAIN CURRENT (A) 30 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.0001 -55oC 20 TA = 125oC 10 25oC -55oC 0 3.5 4.5 5.5 6.5 7.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP2670/FDB2670 Rev C1(W) FDP2670/FDB2670 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 10A 8 100V 6 CAPACITANCE (pF) 2000 VDS = 50V 75V 1500 CISS f = 1MHz VGS = 0 V 1000 4 500 CRSS COSS 2 0 0 5 10 15 20 25 30 Qg, GATE CHARGE (nC) 0 0 25 50 75 100 125 150 175 200 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 2000 RDS(ON) LIMIT 10us ID, DRAIN CURRENT (A) 100us 10 1ms 10ms 100ms DC VGS = 10V SINGLE PULSE RJC = 1.6oC/W TC = 25oC 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) 1500 SINGLE PULSE RJC = 1.6C/W TC = 25C 1000 1 500 0 0.00001 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJC(t) = r(t) * RJC RJC = 1.6 C/W P(pk) t1 t2 TJ - TC = P * RJC(t) Duty Cycle, D = t1 / t2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.00001 0.0001 0.001 t1, TIME (sec) 0.01 0.1 1 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDP2670/FDB2670 Rev C1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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